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Materials Offered
 
 
 
 
 
   III - V Materials and Substrates
Material / Substrate Doping Conduct type Carrier Concentration
cm-3		 EPD
cm-2
GaAs

None
Cr
Si
Te
Zn

SI
SI
N
N
P

  /
/
> 5x10E17
  ~2x10E18
>5x10E18

 <5x10E5
GaP

S
undoped

N
N

2 - 8x10E17
2 - 6x10E16

 <1x10E5
GaSb

none
None, high R
Zn
Te
Te, high R

P
P(-)
P(+)
N
N

1-2x10E17
1-5x10E16
1-5x10E18
2-6x10E17
1-5x10E16

 <1x10E3
InAs none N 1-2x10E16 <5x10E4
InSb

none
Te
Ge

N
N
P

1~5 x10E14
1~2 x10E15
1~2x10E15

 <2x10E2
InP

none
Sn
S
Fe
Zn

N
N
N
SI
P

1-2x10E16
1-3x10E18
1-4x10E18
 /
6-4x10E18

 <5x10E4

GaN, Ask for Materials Specification

GaAs (Gallium Arsenide) Product Series 6000
LEC and VGF grown material, prime grade in wafer diameters of 50.8 mm(2”) up to 150mm(6”).
[ Request Price Quote ]

GaP (Gallium Phosphide) Product Series 6100
Up to 2 inch in diameter.
[ Request for Quote ]

GaN (Gallium Nitride) Product Series 6200
[ Special request item, ask for details and quotation ]

      
Materials Diameter Typical Price Range (quantity 1 - 50) Product Series Order
GaSb 2 inch wafer
3 inch wafer		 $400 - $600
$700 - $995		 6300 [ order ]
InAs 2 inch wafer
3 inch wafer		 $400 - $600
$900 - $1,400		 6400 [ order ]
InSb 2 inch wafer
3 inch wafer		 $800 - $1,300
$1,400 - $1,800		 6500 [ order ]
InP 2 inch wafer
3 inch wafer		 $375 - $600
$800 - $1,300		 6600 [ order ]
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